研究業績一覧　　　　　　　　　　　　　　　　　　　　　　　　　近藤　進

【学術論文】

(1)S.Miyazawa and S.Kondo　

　　　 "Preparation of paratellurite TeO2"　　 Mat. Res. Bull.8,　p1215　(1973)

(2)K.Sugii, S.Miyazawa, S.Kondo, S.Fusimi and H.Iwasaki　

　　　 "Characterization of LiNbO3 single crystal by X-ray topography" Review of ECL.23,　　

　　　 p569 (1975)

(3)K.Sugii, H.Koizumi, S.Miyazawa and S.Kondo

　　　 "Temperature variation of lattice parameter of LiNbO3, LiTaO3 and Li(Nb,Ta)O3 　　　

　　　 solid-solutions" J.Crystal Growth 33, p199 (1976)

(4)S.Kondo, K.Sugii, S.Miyazawa and S.Uehara

　　　 "LPE growth of Li(Nb,Ta)O3 solid-solution thin film waveguide on LiTaO3 substrate"　

　　　 J.Crystal Growth 46, p314 (1979)

(5)K.Sugii and S.Kondo

　　　 "Direct measurement of temperature dependence of lattice mismatches between 　

　　　 LPE-grown Li(Nb,Ta)O3 film and LiTaO3" J.Crystal Growth 64, p607 (1979)

(6)S.Miyazawa, S.Kondo and M.Naganuma

　　　 "A novel encapsulant material for LEC growth of GaSb"　J.Crystal Growth 49, 　

　　　p670 (1980)

(7)S.Kondo, S.Miyazawa, K.Sugii and H.Iwasaki　　　

　　　 "Refractive indices and surface morphology of LPE grown Li(Nb,Ta)O3 films on 　　　

　　　 LiTaO3"　　　J.Crystal Growth 50, p605 (1980)

(8)S.Kondo and S.Miyazawa　

　　　 "Low dislocation density GaSb single crystals grown by LEC technique" J.Crystal

　　　 Growth 56, p39 (1982)

(9)S.Kondo, T.Amano and H.Nagai

　　　 "Prevention of circumferential melt back in LPE growth of InP/InGaAsP/InGaAs/InP 　　

　　　 layers for APD" J.Crystal Growth 61, p8 (1983)

(10)S.Kondo, T.Amano and H.Nagai

　　　 "High purity LPE growth of InGaAs by adding Al to the melt" J.Crystal Growth 64, 　　

　　　 p433 (1983)

(11)S.Kondo, T.Amano and H.Nagai

　　　 "High purity LPE growth of InP by Co addition to In-P melt" Japan J. Appl. Phys. 26　　

　　　 p1997 (1987)

(12)T.Amano, S.Kondo and H.Nagai

　　　 "Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of InGaAs"　　

　　　 Jpn.J.Appl.Phys.31,　　 p2185 (1992)

(13)T.Amano, S.Kondo and H.Nagai

　　　 "High purity liquid phase epitaxial growth of InP" Jpn.J.Appl.Phys.32 11A,　　 p4878　

　　　 (1993)

(14)T.Amano, S.Kondo, H.Nagai and S.Maruyama

　　　 "Urtrahigh Purity Liquid Phase Epitaxial Growth of GaAs" Jpn.J.Appl.Phys.32　　9A, 　

　　　 p3692 (1993)

(15)S.Kondo, S.Matsumoto and H.Nagai

　　　 "Metaloraganic chloride vapor phase epitaxial growth of III-V compounds in a single 　　

　　　 reactor" J. Crystal Growth　　　132, p305 (1993)

(16)S.Kondo, K.Wakita, Y.Noguchi, N.Yoshimoto, M.Nakao, and K.Nakashima

　　　 "MOVPE growth of strained InGaAs/InAlAs MQWs for a polarization inssensitive 　　　

　　　 electro-absorption modulator"　J.Electron. Materials 25, p385(1996)

(17)K.Wakita, K.Yoshino, A.Hirano, S.Kondo, and Y.Noguchi

　　　 "Very-high-speed and low driving-voltage modulator modules for a short optical pulse 　　

　　　 generation" IEICE TRANS. ELECTRON. E81-C　　　 2 p175 (1998)

(18)K.Wakita, I.Kotaka, S.Matsumoto R.Iga, S.Kondo, and Y.Noguchi

　　　 "Very-high-allowability of incidental optical power for polarization-insensitive 　　

　　　 InGaAs/InAlAs multiple quantum well modulators buried in semi-insulating InP"　

　　　 Jpn.J.Appl.Phys.37　　I-3B, p1432 (1998)

(19)H.Sugiura, M.Mitsuhara, S.Kondo, and Y.Suzaki

　　　 "Thermal cleaning of air-exposed p-type InGaAs films and CBE regrowth of 　　

　　　　　　 carbon-doped InGaAs layers for optical device application"

　　　 J. Crystal growth 200, p13 (1999)

(20)S.Oku, S.Kondo,Y.Noguchi, T.Hirano, M.Nakao and T.Tamamura,

　　　 "Surface-grating distributed Bragg reflector lasers with deep etched grooves formed by 　

　　　 reactive beam etching" Jpn.J.Appl.Phys. 38, pp1256-1260 (1999)

(21)S.Kodama, T.Ito, N.Watanabe, S.Kondo, H.Takeuchi, H.Ito and T.Ishibashi, "Optical Gate

　　　 Integrating a Photodiode and an Electroabsorption Modulator", Optical society of

　　　 America TOPS 49, pp122-128 (2001)

(22)S.Kondo, Y.Noguchi, K.Tsuzuki, M.Yuda, S.Oku, Y.Kondo and H.Takeuchi, 　　　　　　

　　　 "Ruthenium-doped semi-insulating InP-buried InGaAlAs/InAlAs multi-quantum-well 　　

　　　 modulators", Jpn. J. Appl. Phys. 41, pp1171-1174 (2002)

(23) M. Ogasawara, R. Iga, T. Yamanaka, S. Kondo, and Y. Kondo, "Correlation

　　　 between Fe-Zn inter-diffusion observed by scanning capacitance microscopy

　　　 and device characteristics of electro-absorption modulators", 　　　　　　　　

　　　 Jpn.J.Appl.Phys.42,pp2320-2324 (2003)

【Letters】

(1)S.Kondo, S.Miyazawa and H.Iwasaki

　　　 "Growth cells in Rh-doped LiNbO3 single crystals" J.Crystal Growth 26, p323 (1974)

(2)S.Kondo, S.Miyazawa, K.Sugii and S.Fusimi

　　　 "Liquid phase epitaxial growth of single crystal LiNbO3 thin film" Appl.Phys.Lett. 26,　　

　　　 p489 (1975)

(3)S.Miyazawa S.Fusimi and S.Kondo　

　　　 "Optical waveguide of LiNbO3 thin film grown by liquid phase epitaxy" Appl. Phys. 　　

　　　 Lett. 26, p8 (1975)

(4)S.Kondo, S.Miyazawa and H.Iwasaki

　　　 "Fabrication of multi-layer optical waveguide by LPE technique" Materials Reserch 　　　

　　　 Bull. 15, p243(1980)

(5)M.Ikeda, K.Wakita, S.Hata, S.Kondo and H.Kanbe

　　　 "Planar InP/InGaAs APD with a guardring formed by Cd diffusion through SiO2"　　　　

Electron. Lett. 19, p61 (1983)

(6)S.Kondo, T.Amano and H.Nagai

　　　 "Growth of InP and InGaAs by MO-chloride VPE" Japan J.Appl.Phys.Lett. 25,　

　　　 pL770 (1986)

(7)S.Kondo, S.Matsumoto and H.Nagai

　　　 "660 nm InGaP Light Emitting Diodes on Si Substrates"　Appl. Phys. Lett. 53,　

　　　 p279 (1988)

(8)S.Kondo, H.Nagai, Y.Itoh and M.Yamaguchi

　　　 "InGaP Orange Light Emitting Diodes on Si Substrates" Appl. Phys. Lett.55, p1981　　　

　　　 (1989)

(9)M.Yamaguchi, M.Tachikawa, Y.Itoh, M.Sugo, and S.Kondo

　　　 "Thermal Annealing Effects of Defect Reduction in GaAs on Si Substrates" Appl. Phys.

　　　 Lett.68, p4518 (1990)

(10)S.Kondo, H.Yasaka, Y.Noguchi, K.Magari, M.Sugo and O.Mikami

　　　 "Very wide spectrum multiquatum well superluminescent diode at 1.5 um" Electronics 　　

　　　 Letters 28 p132 (1992)

(11)N.Yoshimoto, K.Kawano, H.Takeuchi, S.Kondo and Y.noguchi

　　　 "Spot size converters using InP/InAlAs multiquntum well waveguides for low-loss

　　　 singlemode fiber coupling" Electronics Letters 28, p1610 (1992)

(12)H.Takeuchi, Y.Hasumi, S.Kondo and Y.Noguchi

　　　 "4x4 diectional coupler switch matrix with an InGaAlAs/InAlAs multiquntum well

　　　 structure"　　　　Electron. Letters 29, p523 (1993)

(13)T.Ito, M.Kohtoku, N.Yoshimoto, K.Kawano, S.Sekine, M.Yanagibashi and S.Kondo

　　　 "Dynamic response of 2x2 InGaAlAs/InAlAs multiquantum well (MQW) directional 　　

　　　 coupler waveguide switch modules" Electronics Letters 30, p1936 (1994)

(14)K.Wakita, K.Yoshino, I.Kotaka, S.Kondo and Y.Noguchi

　　　 "Polarization-independent electroabsorption modulators using strain-compensated

　　　 InGaAs-InAlAs MQW structures"　　　IEEE PTL 7, p132 (1995)

(15)K.Kawano, S.Sekine, H.Takeuchi, M.Wada, M.Kohtoku, N.Yoshimoto, T.Ito, M.Yanagibasi, 　　

　　S.Kondo and Y.noguchi

　　　 "4x4 InGaAlAs/InAlAs MQW directional coupler waveguide switch modules integrated 　

　　　 with spot-size converters and their 10Gbit/s operation" Electronics Letters 31, p96 　　　

　　　 (1995)

(16)M.Wada, M.Kohtoku, K.Kawano, S.Kondo, Y.Tohmori, Y.Kondo, K.Kishi, Y.Sakai, 　　　

　　　 I.Kotaka, Y.Noguchi and Y.Itaya

　　　 "Laser diodes monolithically integrated with spot-size converters fabricated on 2inch InP

　　　 substrates" Electronics Letters 31, p1252 (1995)

(17)K.Wakita, K.Yoshino, I.Kotaka, S.Kondo and Y.Noguchi

　　　 "High speed, high efficiency modulator module with polarization insensitivity and very

　　　 low chirp" Electronics Letters 31, p2041 (1995)

(18)M.Wada, M.Kohtoku, K.Kawano, H.Okamoto, Y.Kadota, Y.Kondo, K.Kishi, S.Kondo, 　　

　　　 Y.Sakai, I.Kotaka, Y.Noguchi and Y.Itaya

　　　 "High-coupling-efficiency laser diodes integrated with spot-size converters fabricated on

　　　 2inch InP substrates"　Electronics Letters 31, p2102 (1995)

(19)N.Yoshimoto, S.Kondo, Y.Noguchi, T.Yamanaka, and K.Wakita

　　　 "Polarization-insensitive field-induced refractive index change using a lattice-matched 　　

　　　 InGaAlAs/InAlAs multiple quantum well structure" Appl.Phys.Lett. 69, p4239 (1996)　　

(20)N.Yoshimoto, Y.Shibata, S.Oku, S.Kondo, Y.noguchi, K.Wakita and M.Naganuma

　　　 "Fuly polarizaton independent Machzehnder optical switch using a latice-matched

　　　 InGaAlAs/InAlAs MQW and high-mesa waveguide structure" Electronics Letters 32, 　　

　　　 p1368 (1996)

(21)K.Wakita, K.Yoshino, I.Kotaka, S.Kondo, and Y.Noguchi

　　　 "Blue-chirp electroabsorption modulators with very thick quantum wells" IEEE PTL 8, 　

　　　 p1169 (1996)

(22)N.Yoshimoto,T.Yamanaka,S.Kondo,Y.Noguchi, and K.Wakita

　　　 "Large field-induced refractive-index change on TM-polarized light in an 　　　　

　　　 InGaAlAs-InAlAs MQW waveguide structure" IEEE PTL 9, p200 (1997)

(23)H.Sugiura, S.Kondo, M.Mituhara, S.Matumoto, and M.Itoh

　　　 "Be-Zn interdiffusion and influence on InGaAsP lasers fabricated by hybrid growth of

　　　 chemical beam epitaxy and metalorganic vapor phase epitaxy" Appl.Phys.Lett. 70, 　　　

　　　 p2846 (1997)

(24)K.Kawano, M.Kohtoku, M.Ueki, T.Ito, S.Kondoh, Y.Noguchi, and Y.Hasumi　　　　　　

　　　 "Polarozation-insensitive travelling-wave electrode electroabsorption (TW-EA) 　

　　　 modulator with bandwidth over 50GHz and driving voltage less than 2V"　　　　

　　　 Electronics Letters　　 33, p1580 (1997)

(25)N.Yoshimoto, Y.Shibata, S.Oku, S.Kondo, and Y.Noguchi

　　　 "High-input-power saturation properties of a polarization-insensitive semiconductor 　　　

　　　 Mach-Zehnder interferometer gate switch for WDM applications" IEEE PTL 10, p531 　

　　　 (1998)

(26)M.Yuda, S.Kondo, Y.Noguchi, and K.Kishi

　　　 "Electrical evaluation of side wall damage caused by CH4/H2 reactive ion etching"

　　　 Jpn. J.Appl.Phys.Lett. 37, p4624 (1998)

(27)H.Fukano, Y.Noguchi and S.Kondo

　　　 "1.5um InGaAlAs strained MQW ridged-waveguides laser diodes with hot-carrier

　　　 injection suppression structure" Electron.Letters 35, p1 (1999)

(28)K.Yoshino, T.Takeshita, I.Kotaka, S.Kondo, Y.Noguchi, R.Iga and K.Wakita,

　　　 "Compact and stable electro absorption optical modulator module"

　　　 IEEE J.Lightwave Technology 17, p1700 (1999)

(29)N.Yamamoto, S.Seki, Y.Noguchi and S.Kondo

　　　 "Design criteria of 1.3um multiple quantum well lasers for high temperature operation"

　　　 IEEE PTL 12, p137 (2000)

(30) K.Tsuduki, Y.Kawaguchi, S.Kondo, Y.Noguchi, N.Yoshimoto, H.Takeuchi,　　　　　　

　　　　　　M.Hosoya, and M.Yanagibashi, “Four-Channel Arrayed Polarization　　　　　　　　　　

　　　　　　Independent EA Modulator with an IPF Carrier Operating at 10Gb/s”, IEEE　　　　

　　　　　　PTL. 12 (3), pp281-283 (2000)

(31) K. Asaka, Y. Suzaki, S. Kondo, Y. Noguchi, H.Okamoto, R. Iga, and S.

　　　 Oku, "Lossless Electr-absorptionModulator Monolitically Integrated with a

　　　 Semiconductor Optical Amplifier and a Passive Waveguide", IEEE Photon.

　　　 Technol. Lett.15, pp679-681 (2003)

(32) Y. Suzaki, K. Asaka, Y. Kawaguchi, S. Oku, Y. Noguchi, S. Kondo, R. Iga,

　　　 and H. Okamoto, "High extinction ratio performance of a DWDM monolitic

　　　 Multi-Cannel Modulation Circuit", IEE Electron. Lett. 39,pp306-307 (2003)

【国際会議】

(1)K.Sugii, S.Kondo, S.Miyazawa and S.Fusimi

　　　 "Growth and characterization of single domain LiNbO3 single crystal"

　　　 4th Inter. Confer. Crystal Growth (1973)

(2)S.Kondo, K.Sugii and S.Miyazawa　

　　　 "LPE growth and properties of Li(Nb,Ta)O3 thin film on LiTaO3 for integrated optics"　

　　　 IOOC '77 Tokyo　　　A8-2 (1977)

(3)S.Kondo, K.Sugii, S.Miyazawa and H.Iwasaki

　　　 "LPE growth of Li(Nb,Ta)O3 thin films for optical waveguide"　Inter. Confer. on 　　　

　　　 Vapour Growth and Epitaxy　　12C-p3, (1978)

(4)K.Takahei, H.Nagai and S.Kondo

　　　 "Immiscible domain in low temparature LPE of InGaAsP on InP" Internat. Confer. 　　　

　　　 GaAs and Related Compound, Oiso, (1981)

(5)S.Hata, M.Ikeda, T.Amano, S.Kondo and G.Motosugi

　　　 "A complete planar type PINFET using p-column gate" Inter. Confer. Solid State Devise

　　　 Kobe, (1984)

(6)S.Yamada, K.Uwai, Y.Kawaguchi E.Kubota and S.Kondo

　　　 "Far infrared studies of residual shallow donors and compensation ratios in high purity 　　

　　　 InP" 4th Inter. Confer. Semi-Insulating III-V Materials, Hakone (1986)

(7)S.Kondo, S.Matsumoto and H.Nagai

　　　 "InGaP Visible Light Emitting Diodes on Si substrate" '88 Inter. Confer. Solid State 　　　

　　　 Devises and Materials, Tokyo D3-(1), (1988)

(8)M.Yamaguchi and S.Kondo

　　　 "Hetroepitaxy of III-V Compounds on Si Substrates for Solar Cells and LED"

　　　 Materials Research Conference 1989 spring meeting, (1989)

(9)K.Magari, S.Kondo, H.Yasaka, Y.Noguchi and O.Mikami

　　　 "A High Gain Multiple Quantum Well Optical Amplifier Operating at 1.55um"　　

　　　 3rd Optoelectronics Cofer. 12A1-5 (1990)

(10)N.Yoshimoto,K.Kawano,H.Takeuchi,S.Kondo, and Y.Noguchi

　　　 "Efficient coupleing semiconductor waveguide spot-size converter with a double core 　　

　　　 structure"　4th Optoelectronics Conference (OEC'92) PD-5, (1992)

(11)N.Yoshimoto, K.Kawano, M.Kotoku, S.Sekine, M.Yanagihasi and S.Kondo

　　　 "The first demonstartion of 2x2 semiconductor switch module integrated with a spot size

　　　 converter" IPR '94　　 sac-5, (1994)

(12)M.Wada, M.Kohtoku, K.Kawano, S.Kondo,Y.Tohmori, Y.Kondo, K.Kishi, Y.Sakai, I.Kotaka,

　　　 Y.Noguchi and Y.Itaya

　　　 "Laser diodes integrated with spot-size converters fabricated on 2-inch indium phosphide

　　　 substrates" CLEO/PACIFIC RIM　FU4 233, (1995)

(13)K.Yoshino,K.Wakita,I.Kotaka,S.Kondo and Y.Noguchi

　　　 "Polarization-independent electroabsorption modulator using strain-compensated 　

　　　 InGaAs/InAlAs MQW structure" CLEO/PACIFIC RIM　P51, p277 (1995)

(14)K.Wakita,K.Yoshino,I.Kotaka,S.Kondo and Y.Noguchi

　　　 "High-speed, highly efficient MQW modulator module with polarization insensitivity 　　

　　　 and very low chirp" ECOC'95-Brussels　Th.B.3.2,　　 p1011 (1995)

(15)S.Kondo, K.Wakita, Y.Noguchi and N.Yoshimoto

　　　 "Fabrication of a polarization insensitive electroabsorption modulator with strained 　　　

　　　 InGaAs/InAlAs MQW by MOVPE" 7th IPRM (Sapporo '95) WA2.4　p61(1995)

(16)K.Yoshino, K.Wakita, I.Kotaka, S.Kondo, Y.Noguchi, S.Kuwano, N.Takachio, Y.Imai, and

　　　 T.Enoki

　　　 "40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with

　　　 very low driving-voltage" ECOC'96-Oslo WeD.3.5 (1996)

(17)K.Wakita, I.Kotaka, R.Iga, S.Kondo, and Y.Noguchi

　　　 "Increased saturation intensity and high-input-optical-power allowable InGaAs/InAlAs 　　

　　　 MQW modulators buried in semi-insulating InP" SSDM '97 (1997)　　　

(18)K.Wakita, K.Yoshino, S.Matsumoto, I.Kotaka, N.Yoshimoto, S.Kondo, and Y.Noguchi

　　　 "Very low insertionloss(<5dB) and high-speed InGaAs/InAlAs MQW modulators

　　　 buried in semi-insulating InP" OFC'97　 WG3 (1997)

(19)K.Wakita, K.Yoshino, A.Hirano, S.Kondo, and Y.Noguchi

　　　 "4-5 ps optical pulse generation with 40GHz train from low driving-voltage modulator 　　

　　　 modules"　　　10th IPRM (Tsukuba '98) (1998)

(20)H.Kamioka, Y.Akage, H.Takeuchi, R.Iga, S.Kondo, Y.Noguchi, K.Wakita, and M.Fukuda　

　　　 "Reliability study of InGaAlAs/InAlAs MQW electro-absorption modulators" 10th

　　　 IPRM (Tsukuba '98) (1998)

(21)T.Oku, S.Kondo, Y.Noguchi, T.Hirono, M.Nakao, and T.Tamamura

　　　 "Surface-grating Bragg reflector laser using deeply etched groove formed by reactive 　　

　　　 beam etching" 10th IPRM (Tsukuba '98) TuP-58 (1998)　　　

(22)K.Tsuzuki, Y.Kawaguchi, S.Kondo, Y.Noguchi, N.Yoshimoto, H.Takeuchi, M.Hosoya and

　　　 M.Yanagihasi

　　　 "Four-channel polarization independent EA modulator arry with IPF carrier operated at

　　　 10　Gbit/s" ECOC'99 (1999)　

(23)　K.Tsuduki, S.Kondo, Y.Noguchi, R.Iga, S.Oku, T.Yamanaka and H.Takeuchi,　　　

　　　　　　“Polarization-Independent loss less SOA integrated EA modulator with　　　

　　　　　　Fe-doped InP buried structure,” OECC 2001, pp581-582 (2001)

(24) S.Kondo, Y.Noguchi, K.Tsuduki, M.Yuda, S.Oku, Y.Kondo and H.Takeuchi,

　　　 “Ruthenium-doped semi-insulating InP buried InGaAlAs/InAlAs MQWs modulators”

　　　2001 International Coference on InP and Related Materials (Nara), FA3-4, Post

　　　 Deadline Papers, pp19-20 (2001)

(25) M. Ogasawara, R. Iga, S. Kondo, and Y. Kondo, "Correlation between Fe-Zn

　　　 inter-diffusion observed by scanning capacitance microscopy and device

　　　 characteristics of electro-absorption modulators",Ext. Abstr. of SSDM2002,

　　　 Nagoya, p. 344.

(26) M. Ogasawara, R. Iga, T. Yamanaka, S. Kondo, and Y. Kondo, "Suppression

　　　 of Zn diffusion into absorption layers in electro-absorption modulators due

　　　 to the use of Ru-doped semi-insulating InP buried heterostructures", IPRM2003 Santa　

　　　 Barbara, WB2-6 (2003)

　

【特許】

(1)　“Semiconductor optical device and fabrication method”

　　　　European Patent, No.01251610 Jan.28(2006) （独,英,仏,伊）

(2)　“Semiconductor optical device and fabrication method”

　　　　European Patent, No.01286439 Apr.12(2006) （独,英,仏,伊）

　

(3)　“Semiconductor optical device and fabrication method”

　　　　United State Patent, No.07060518 Jan.13(2006) (米)