| 主要業績 |
論文
- "Liquid phase-epitaxial glowth of single-crystal LiNbO3 thin film", Appl.Phys.Lett.26, p489(1975)
- "LPE growth of Li(Nb,Ta)O3 solid-solution thin film waveguide on LiTaO3 substrate", J.Crystal Growth 46, p314(1979)
- "Prevention of circumferential melt back in LPE growth of InP/InGaAsP/InGaAs/InP layers for APD", J.Crystal Growth 61, p8(1983)
- "660nm InGaP light emitting diodes on Si substrate", Appl.Phys.Lett.53, p273(1989)
- "MOVPE growth of strained InGaAs/InAlAs MQWs for a polarization insensitive electro-absorption modulator", J.Electron.Materials 25, p385(1996)
- "Ruthenium doped Semi-insulating InP Buried InGaAlAs/InAlAs Multi-Quantum-Well Modulators", Jpn.J.Appl.Phys.41, p1171(2002)
特許
- "Semiconductor optical device and fabrication method"
European Patent,No.01251610 Jan.28(2006) 独、英、仏、伊
No.01286439 Apr.12(2006) 独、英、仏、伊
United State Patent,No.07060518 Jan.13(2006)米
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